Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror

Nowadays, a deterministic approach based on physics of failure is necessary to estimate the lifetime of integrated circuits. Therefore, the reliability analyses via electrical/aging simulations are performed during the design phase. Our previous works consisted in generating an aging behavioral model of a circuit in order to assess its degradation level and to predict its lifetime according to its mission profile. This paper presents obtained experimental results using our developed methodology to evaluate the influence of total ionizing dose effects on an n-MOS simple current mirror taking into account technological dispersions.