Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses

The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the resistive switching phenomenon observed in MIM structures for memory applications are discussed.