A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories

In this paper, we suggest a new computation method to simulate the temperature behavior of Fowler–Nordheim tunneling current through the oxide of an EEPROM cell based on surface potential evaluation with temperature dependence. The main idea of this paper is to simulate the tunneling current temperature dependence with only Si–SiO2 barrier height and surface potential dependences with temperature. Parameters are experimentally extracted from large SOS capacitor measurements. So, final results of the programming window have shown comparing to simulations and measurements.