کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545487 | 1450554 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
A calibrated system for power metal reliability analysis in smart power technology chips is presented. This system is mainly designed for temperature evaluation during temperature-cycling experiments. Infrared camera measurements under single shot high energy pulses are correlated with electro-thermal finite element simulation and failure analysis. A special test structure, containing poly-silicon heaters, is used to produce thermal stress. The location of a hot spot agrees well with the position of degraded power metal.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 49, Issues 9–11, September–November 2009, Pages 1132–1136
Journal: Microelectronics Reliability - Volume 49, Issues 9–11, September–November 2009, Pages 1132–1136
نویسندگان
Helmut Köck, Vladimir Košel, Christian Djelassi, Michael Glavanovics, Dionyz Pogany,