کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545511 1450554 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Accelerated lifetime test of RF-MEMS switches under ESD stress
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Accelerated lifetime test of RF-MEMS switches under ESD stress
چکیده انگلیسی

This paper presents the results of a study on issues of reliability and accelerated life testing for radio frequency micro-electromechanical system (RF-MEMS) capacitive devices. A human-body-model electrostatic discharge tester has been used to induce charging by operating at stress levels much higher than would be expected in normal use. Temperature ranges from 300 K to 330 K allows the understanding of physical mechanisms that may be responsible for the device’s reliability.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 49, Issues 9–11, September–November 2009, Pages 1256–1259
نویسندگان
, , , , , , , , ,