Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation

In the proposed study, the investigation of the internal physical behaviour of the Trench Punch through Insulated Gate Bipolar Transistor under short-circuit with an external uni-axial mechanical stress have been fully carried out. A 2D physically-based simulation approach has been proposed. The deformation potential theory and the piezoresistive effect were adopted for the stress dependence modeling of the band edge potential and the carrier mobility, respectively. Simulation results show that the saturation current during short-circuit operation is strongly affected by external mechanical stress depending on its level, direction and nature (compressive or tensile), mainly due to the carrier mobility change.