TCAD RF performance investigation of Transparent Gate Recessed Channel MOSFET

• TGRC-MOSFET improved analog and RF performance at THz frequency range.
• Enhancement in transconductance, reduction in parasitic capacitances and reduction in SCEs such as DIBL is observed.
• Improvement is perceived both in reflection and transmission coefficients as compared to CRC-MOSFET.
• 42% Enhancement in cut-off frequency, 132% increment in maximum oscillator frequency is observed.
• TGRC-MOSFET is appropriate for high-performance System-On-Chip RF/microwave applications.

In this paper, analog/RF performance and small signal behavior of Transparent Gate Recessed Channel (TGRC) MOSFET has been investigated in terms of transconductance, DIBL, channel resistance parasitic capacitances, cut-off frequency and maximum oscillator frequency. Results so obtained are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency range, using ATLAS-3D device simulator. Furthermore, the impact of technology parameter variations in terms of gate length (Lg) has also been evaluated. Result shows that there is 42% enhancement in cut-off frequency, 132% increment in maximum oscillator frequency and significant improvement in parasitic capacitances for TGRC-MOSFET due to reduced short channel effects (SCEs) and enhanced on-current driving capabilities thus, reflecting its significance in high-frequency THz range applications.