کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5456333 | 1514659 | 2017 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of intermetallic phases and recrystallization on the corrosion and fracture behavior of an Al-Zn-Mg-Cu-Zr-Yb-Cr alloy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The effects of alloying elements on the characteristics of intermetallic phases and recrystallization in Zr, Yb, Cr-containing Al-Zn-Mg-Cu alloys have been investigated. The results show that the inhibiting recrystallization and subgrain growth behavior mainly could be attributed to the fine, dense, secondary, coherent Cr-containing Al3(Yb, Zr) dispersoids with core-shell structures. The volume fraction of primary and secondary Al18Mg3Cr2 phases decreased and then increased with increasing Cr content from 0.09wt% to 0.22Â wt% in the Al-Zn-Mg-Cu-Zr-Yb-Cr alloys. Cr content has little effect on the recrystallization resistance and strengthening effect. Recrystallization of the Al-Zn-Mg-Cu-Zr-Yb-Cr alloys can be attributed to the particle stimulated nucleation (PSN) owing to the presence of primary micro-scale Al2CuMg and Al18Mg3Cr2 particles, resulting in a decline in the fracture toughness, tensile properties and corrosion resistance. In the Al-Zn-Mg-Cu-Zr-Yb-Cr alloys, fracture and local corrosion preferentially initiate from these primary micro-scale particles, and then propagate along the high-angle recrystallized grain boundaries or original grain boundaries with continuous, coarser grain boundary precipitates and broadening precipitate-free zone at its periphery. Compared with Al18Mg3Cr2 discrete particles, the Al2CuMg constituent particles are more susceptible to be corroded.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volume 684, 27 January 2017, Pages 480-490
Journal: Materials Science and Engineering: A - Volume 684, 27 January 2017, Pages 480-490
نویسندگان
H.C. Fang, F.H. Luo, K.H. Chen,