A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si

- We propose a method for characterization of ion damage in Si using a Tip-on-Gate of Field-Effect Transistor (ToGoFET) probe.
- We fabricated a ToGoFET probe embedded with an ion-implanted metal-oxide-semiconductor FET (MOSFET) for efficient transduction of the electrical signal at the probe tip.
- The ToGoFET probe can detect the surface electrical properties by measuring source-drain current directly modulated by the charge on the tip.
- The FET embedded on ToGoFET probe detected the surface electric field profile generated by schottky contact between the Pt tip and the sample surface.
- This result shows the potential that the local contact potential difference can be measured by simple working principle with high sensitivity.

We have examined the capabilities of a Tip-On-Gate of Field-Effect Transistor (ToGoFET) probe for characterization of FIB-induced damage in Si surface. A ToGoFET probe is the SPM probe which the Field Effect Transistor(FET) is embedded at the end of a cantilever and a Pt tip was mounted at the gate of FET. The ToGoFET probe can detect the surface electrical properties by measuring source-drain current directly modulated by the charge on the tip. In this study, a Si specimen whose surface was processed with Ga+ ion beam was prepared. Irradiation and implantation with Ga+ ions induce highly localized modifications to the contact potential. The FET embedded on ToGoFET probe detected the surface electric field profile generated by schottky contact between the Pt tip and the sample surface. Experimentally, it was shown that significant differences of electric field due to the contact potential barrier in differently processed specimens were observed using ToGOFET probe. This result shows the potential that the local contact potential difference can be measured by simple working principle with high sensitivity.