کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545716 871846 2014 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A low phase noise and low power 3–5 GHz frequency synthesizer in 0.18 µm CMOS technology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A low phase noise and low power 3–5 GHz frequency synthesizer in 0.18 µm CMOS technology
چکیده انگلیسی

A low power frequency synthesizer for WLAN applications is proposed in this paper. The NMOS transistor-feedback voltage controlled oscillator (VCO) is designed for the purpose of decreasing phase noise. TSPC frequency divider is designed for widening the frequency range with keeping low the power consumption. The phase frequency detector (PFD) with XOR delay cell is designed to have the low blind and dead zone, also for neutralizing the charge pump (CP) output currents; the high gain operational amplifier and miller capacitors are applied to the circuit. The frequency synthesizer is simulated in 0.18 µm CMOS technology while it works at 1.8 V supply voltage. The VCO has a phase noise of −136 dBc/Hz at 1 MHz offset. It has 10.2% tuning range. With existence of a frequency divider in the frequency synthesizer loop the output frequency of the VCO can be divided into the maximum ratio of 18. It is considered that the power consumption of the frequency synthesizer is 4 mW and the chip area is 10,400 µm2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 45, Issue 6, June 2014, Pages 740–750
نویسندگان
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