کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545718 | 871846 | 2014 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment](/preview/png/545718.png)
We have analyzed total ionizing dose response of partially depleted SOI nMOSFETs fabricated in a 0.13 μm commercial technology assisted by TCAD simulation. Using TCAD tools, the ionizing radiation-induced damages in buried oxide and shallow-trench oxide are investigated separately. It is shown that back transistors are radiation tolerant up to 1 Mrad (Si) for core nMOSFETs even under the worst case whereas back transistors of I/O devices are 100 krad (Si) due to lower doping concentration. In addition, the enhanced total dose degradation with applied gate bias is attributed to more charge trapped in shallow-trench oxide. 2D cross section electrical simulation schematically illustrates the evolution of charge trapping in buried oxide and shallow-trench oxide. It is found and verified that parasitic corner transistor located at the bottom of swallow-trench oxide plays a critical role on the radiation hardness of partially depleted SOI nMOSFETs.
Journal: Microelectronics Journal - Volume 45, Issue 6, June 2014, Pages 759–766