کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5457276 1515546 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantum transport in graphene Hall bars: Effects of side gates
ترجمه فارسی عنوان
حمل و نقل کوانتومی در گرافن اتاق های تالار: اثر دروازه های جانبی
کلمات کلیدی
گرافن، تأثیر کولتیوم هال،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
چکیده انگلیسی
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau levels, and creates new propagating states in the Landau spectrum (i.e. snake states). The existence of these new states leads to an interesting modification of the bend and Hall resistances, with new quantizing plateaus appearing in close proximity of the Landau levels. The electron guiding in this system can be understood by studying the current density profiles of the incoming and outgoing modes. From the fact that guided electrons fully transmit without any backscattering (similarly to edge states), we are able to analytically predict the values of the quantized resistances, and they match the resistance data we obtain with our numerical (tight-binding) method. These insights in the electron guiding will be useful in predicting the resistances for other side-gate configurations, and possibly in other system geometries, as long as there is no backscattering of the guided states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 257, May 2017, Pages 20-26
نویسندگان
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