کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5457397 1515554 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure
چکیده انگلیسی
The stability and the electronic structure of ultrathin Bi/Bi2Se3 heterostructure are studied from density-functional theory by including spin-orbit coupling. Our calculations show that the thinnest and dynamically stable heterostructure is one bilayer Bi deposited on Bi2Se3 with the thickness of two quintuple layers. Due to charge transfer and the strong hybridize effect at the interface, the band structure of ultrathin heterostructure make a large change, but the Dirac-like surface states persist. Our findings propose the possibility to engineer heterostructure to obtain ultrathin topological materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 248, December 2016, Pages 43-46
نویسندگان
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