کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5457739 | 1515830 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High carrier concentration in Mg2Si1âxSbx (0 â¤Â x â¤Â 0.10) prepared by a combination of liquid-solid reaction, ball milling, and spark plasma sintering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ternary compounds of Mg2Si1âxSbx (0 â¤Â x â¤Â 0.10) are prepared by a combination of liquid-solid reaction, ball milling, and spark plasma sintering. The carrier concentration of Mg2Si1âxSbx increases with the Sb content x and reaches 1.1 Ã 1021 cmâ3 at x = 0.10, which is approximately ten times higher than that previously reported. The high carrier concentration is attributed to the facilitation of Sb-doping by ball milling and the suppression of Mg vacancy formation by short-time sintering. No decrease in the carrier concentration of Mg2Si0.90Sb0.10 is observed after annealing at 773 K for 100 h in a semi-closed system, which suggests that the compound is stable at 773 K under a high partial pressure of Mg.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Intermetallics - Volume 81, February 2017, Pages 47-51
Journal: Intermetallics - Volume 81, February 2017, Pages 47-51
نویسندگان
Daisuke Kato, Kouta Iwasaki, Masahito Yoshino, Tomoaki Yamada, Takanori Nagasaki,