کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
546128 | 871869 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: A 24 W Ku band GaN based power amplifier with 9.1 dB linear gain A 24 W Ku band GaN based power amplifier with 9.1 dB linear gain](/preview/png/546128.png)
A Ku-band power amplifier is successfully developed with a single chip 4.8 mm AlGaN/GaN high electron mobility transistors (HEMTs). The AlGaN/GaN HEMTs device, achieved by E-beam lithography г-gate process, exhibited a gate-drain reverse breakdown voltage of larger than 100 V, a cutoff frequency of fT=30 GHz and a maximum available gain of 13 dB at 14 GHz. The pulsed condition (100 μs pulse period and 10% duty cycle) was used to test the power characteristic of the power amplifier. At the frequency of 13.9 GHz, the developed GaN HEMTs power amplifier delivers a 43.8 dBm (24 W) saturated output power with 9.1 dB linear gain and 34.6% maximum power-added efficiency (PAE) with a drain voltage of 30 V. To our best knowledge, it is the state-of-the-art result ever reported for internal-matched 4.8 mm single chip GaN HEMTs power amplifier at Ku-band.
Journal: Microelectronics Journal - Volume 43, Issue 8, August 2012, Pages 569–572