کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
546130 | 871869 | 2012 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications](/preview/png/546130.png)
چکیده انگلیسی
This paper presents a study of the effects of slotted metallic planes in passive structures built using CMOS processes for RF and millimeter-wave (mmW) applications. The impact of holes on the reference plane resistance and in the capacitance of any surrounding structure to the plane are investigated through electromagnetic (EM) simulations. Two analytical expressions are derived that capture the holes impact on the plane resistivity and on the dielectric constant of the materials found between the plane and the surroundings. These expressions are used to propose a simplified EM simulation methodology for on-chip microstrip transmission lines.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 43, Issue 8, August 2012, Pages 582–591
Journal: Microelectronics Journal - Volume 43, Issue 8, August 2012, Pages 582–591
نویسندگان
José Luis González, Baudouin Martineau, Didier Belot,