کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5462593 | 1517178 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of CuGa1âxTixS2 thin films synthesized by a facile non vacuum method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of CuGa1âxTixS2 thin films synthesized by a facile non vacuum method Characterization of CuGa1âxTixS2 thin films synthesized by a facile non vacuum method](/preview/png/5462593.png)
چکیده انگلیسی
In present paper, a promising intermediate band (IB) material of CuGaS2 thin films incorporating with titanium (Ti) have been successfully fabricated by a facile non-vacuum method. Binary sulfides used as raw material are firstly tried to fabricate Ti-substituted CuGaS2 thin films via ball milling and spin-coating technique. The experimental measurements showed that the obtained Cu2Ga1âxTixS2 thin films are composed of chalcopyrite structure with well crystallinity. A slightly left shift of (1 1 2) diffraction peaks indicated the successful doping of Ti element. The Hall Effect measurement exhibited the carrier concentration raised obviously from 1.538 Ã 1012 (x = 0) to 1.134 Ã 1013 cmâ3 (x = 0.06) with increasing of Ti doping concentration. More important, the UV-vis-NIR spectra exhibited a strong optical absorption in Ti-substituted CuGaS2 films, which indicated the IBs were roughly formed in the films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 210, 1 January 2018, Pages 51-53
Journal: Materials Letters - Volume 210, 1 January 2018, Pages 51-53
نویسندگان
Wen-Liang Fan, Yan-Lai Wang, Jun Zhu, Wei Jing, Shi-Liang Ban,