کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5463008 | 1517185 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
X-ray photoelectron spectroscopy studies of electronic structure of Nd2âxCexCuO4ây and YBa2Cu3O7ây epitaxial film surfaces and resistive switchings in high temperature superconductor-based heterostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: X-ray photoelectron spectroscopy studies of electronic structure of Nd2âxCexCuO4ây and YBa2Cu3O7ây epitaxial film surfaces and resistive switchings in high temperature superconductor-based heterostructures X-ray photoelectron spectroscopy studies of electronic structure of Nd2âxCexCuO4ây and YBa2Cu3O7ây epitaxial film surfaces and resistive switchings in high temperature superconductor-based heterostructures](/preview/png/5463008.png)
چکیده انگلیسی
Bipolar effect of resistive switchings (BERS) in epitaxial film-based heterostructures Nd2âxCexCuO4ây and YBa2Cu3O7ây is investigated in the paper using the fundamental properties of the HTSC parent compounds - antiferromagnetic Mott insulators, which exhibiting a transition between a metal and an insulator owing to oxygen doping. The studies of electronic structure of the NCCO and YBCO epitaxial films surfaces by XPS and AFM have shown that the surface layer (â¼30Â nm) doped with oxygen is changing from metal (in a film bulk) to insulate state on the surface. The current-voltage characteristics of BERS devices obey a diode-like model upon the approach based on the double-diode equation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 203, 15 September 2017, Pages 97-99
Journal: Materials Letters - Volume 203, 15 September 2017, Pages 97-99
نویسندگان
N.A. Tulina, A.A. Ivanov, A.N. Rossolenko, I.M. Shmytko, A.M. Ionov, R.N. Mozhchil, S.I. Bozhko, I.Yu. Borisenko, V.A. Tulin,