Gallium oxide nanospheres: Effect of the post-annealing treatment

Gallium oxide (Ga2O3) nanospheres were successfully synthesized via electron beam evaporation of gallium nitride (GaN) pellets on anodic aluminium oxide (AAO) template. Raman analysis proves the formed nanospheres were Ga2O3 with all Raman peaks of the Ga2O3 was present with very good intensities. FESEM analysis proves formation of the Ga2O3 nanospheres on the surface of the alumina template with diameters of around ∼300 nm. Further annealing of the sample eliminates the presence of the nanospheres. Surface roughness analysis via the AFM proved smoother surface was achieved upon higher annealing temperature of 600 and 900 °C. In addition, FESEM analysis of the annealed sample at 600 °C indicates that the nanospheres were empty hollow spheres rather than full-filled nanospheres.