کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5463703 | 1517202 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1 µm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 186, 1 January 2017, Pages 138-141
Journal: Materials Letters - Volume 186, 1 January 2017, Pages 138-141
نویسندگان
Xiankuan Meng, Hongmei Deng, Qiao Zhang, Lin Sun, Pingxiong Yang, Junhao Chu,