کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5463949 | 1517193 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and characterization of WO3 thin films on silicon surface by thermal evaporation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication and characterization of WO3 thin films on silicon surface by thermal evaporation Fabrication and characterization of WO3 thin films on silicon surface by thermal evaporation](/preview/png/5463949.png)
چکیده انگلیسی
The transition metal-oxide thin films of WO3 have been prepared by thermal evaporation at a low deposition rate. The material characterization shows that the thin films have stoichiometric composition and the tungsten ions were fully oxidised into W6+. The surface of the WO3 thin films became smoother when the thickness increased. The results show that the deposition of WO3 thin film follows island growth. The flatband voltage of WO3/Si was extracted. The values on n-Si and p-Si were about 0.75Â eV and 0Â eV, respectively. It was also found that large amounts of negative charges were accumulated at the interface of WO3/n-Si because of electron transfer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 195, 15 May 2017, Pages 213-216
Journal: Materials Letters - Volume 195, 15 May 2017, Pages 213-216
نویسندگان
Shenghao Li, Zhirong Yao, Jixiang Zhou, Rui Zhang, Hui Shen,