کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5464983 | 1517562 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pulsed laser deposition of epitaxial MgO buffer layer for proton-conducting ceramic electrolytes
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Pulsed laser deposition of epitaxial MgO buffer layer for proton-conducting ceramic electrolytes Pulsed laser deposition of epitaxial MgO buffer layer for proton-conducting ceramic electrolytes](/preview/png/5464983.png)
چکیده انگلیسی
This work studies the deposition of epitaxial MgO thin films with thickness of 40Â nm deposited on bare Si (100) wafer using pulsed laser deposition (PLD), which can serve as a buffer layer for subsequent growth of textured Y-BaZrO3 with high proton-conductivity. The success of epitaxial deposition were achieved by careful preparation of Si substrate by pre-etching with HF solution, as well as by optimizing deposition parameters including oxygen partial pressure and substrate temperatures. Epitaxial (100) MgO film with cubic lattice structure and the lattice constant of 4.21Â Ã
were obtained, which showed highly lattice match with Y-BaZrO3 perovskite of 4.21Â Ã
.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 320, 25 June 2017, Pages 339-343
Journal: Surface and Coatings Technology - Volume 320, 25 June 2017, Pages 339-343
نویسندگان
Yong Li, Lai Mun Wong, Hanlin Xie, Shijie Wang, Pei-Chen Su,