کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5464987 | 1517562 | 2017 | 26 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural evolution of nanocrystalline silicon in hydrogenated nanocrystalline silicon solar cells
ترجمه فارسی عنوان
تکامل ساختاری سیلیکون نانوکریستیک در سلولهای خورشیدی سیلیکون هیدروژنه نشده
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کلمات کلیدی
سیلیکون نانوکریستال، سلول خورشیدی، بستر انعطاف پذیر، بذر لایه کریستالی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
We deposited hydrogenated nanocrystalline silicon (nc-Si:H) thin films and n-i-p solar cells onto flexible stainless steel substrates through the plasma-enhanced chemical vapor deposition (PECVD) method to investigate the effects of n-doped layers with different crystallinity on the structural evolution of the subsequent intrinsic nc-Si:H layers. The n-doped layers with various crystalline volume fractions were formed by changing the hydrogen dilution ratios. The structural characteristics of the nc-Si:H thin films were tested using transmission electron microscopy (TEM) and Raman scattering measurements. Intrinsic nc-Si:H layers, with an incubation layer up to 200Â nm, were observed deposited on low crystallinity n-doped layers during the initial growth stage. Increasing the crystallinity of n-doped layers helps reduce the thickness of the incubation layers at the n/i interface and improves the microstructure homogeneity of i-layers. The experimental results demonstrate that the short circuit current density and fill factors of solar cells can be greatly improved by adopting high-crystallinity n-doped layers. This is mainly a result of the enhancement of photo-induced carrier transport properties. The n-i-p solar cells with high-crystallinity n-layers exhibited 25% higher conversion efficiency than those with amorphous n-layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 320, 25 June 2017, Pages 362-365
Journal: Surface and Coatings Technology - Volume 320, 25 June 2017, Pages 362-365
نویسندگان
Yujie Yuan, Wei Zhao, Jun Ma, Zhengchun Yang, Wei Li, Kailiang Zhang,