Fabrication and current-voltage characteristics of Mo1 − xWxS2/graphene oxide heterojunction diode

- We combined the Mo1 - xWxS2 and graphene oxide to fabricate heterojunction diode.
- The device I-V properties can be turned accurately using the conduction band bowing effect with different W compositions.
- Mo1 - xWxS2 with different W compositions using our fabrication method provides new semiconductor device applications.
- The demonstrated Mo1 - xWxS2 properties with different x compositions provide new n-type semiconductor material selectivity.

Tungsten-substituted molybdenum disulfide (Mo1 − xWxS2) shows excellent semiconductor properties related to the adjustable band gap structure. Mo1 − xWxS2 is an n-type semiconductor that has high carrier mobility, adjustable electrical characteristics. Graphene, the thinnest two-dimensional material, shows good thermal conductivity and high carrier mobility. The oxygen adsorption effects of graphene permit precise control of its Fermi level and semiconductor properties. We combined Mo1 − xWxS2 films with graphene oxide (GO) in this study to fabricate a pn interface and thoroughly research the energy band and electrical properties for a heterojunction diode. According to the results, the Mo1 − xWxS2 electron affinity decreases with increasing x value of tungsten (W) composition (x = 0.0-1.0, Δx = 0.2). The I-V characteristics of the Mo1 − xWxS2/GO heterojunction diodes can be accurately tuned by conduction band bowing effect with different W composition of the Mo1 − xWxS2 films. By applying our fabricating method, the Mo1 − xWxS2 with different W composition provides a new application of semiconductor device. In this study we using Mo1 − xWxS2 films and GO to fabricate a heterojunction diode, it shows different electrical properties with different x value of Mo1 − xWxS2. The Mo1 − xWxS2 electron affinity decreases with increasing of W composition x value (x = 0.0-1.0, Δx = 0.2). The Mo1 − xWxS2/GO heterojunction diode I-V characteristics can be accurately tuned using the conduction band bowing effect with different W compositions. Mo1 − xWxS2 with different W compositions using our fabrication method provides new semiconductor device applications.