کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546510 1450485 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Revisiting tunneling via Si-quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Revisiting tunneling via Si-quantum dots
چکیده انگلیسی

There is a significant increase in interaction when the individual quantum dot (QD) states are occupied consistent with Pauli's exclusion principle. Coupling of these QDs form a two-dimensional (2D)-like system and gives rise to steps in conductance. This important many-body effect, which explains why conductance steps are usually led by conductance peaks, was recognized only recently after LaFave and I solved the problem of the discrete nature of electrons on the capacitance of a dielectric sphere, a problem so similar to the QD. I think the spreading into a 2D system applies even to quantum wells (QWs), particularly when the number of electrons involved is drastically reduced when local inhomogeneity from traps enter the picture. Technologically, Nicollian and I spent 6 years and failed to create a nanoquantum device having a wide usage. In fact, most ‘miracles’ in modern technology such as the traveling wave tube, the MOSFET, the CCD, etc. are so special, almost as rare as winning a lottery.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issues 3–4, March–April 2008, Pages 335–343
نویسندگان
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