کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465175 | 1398869 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization Strain and optical characteristics study of ferromagnetic GaMnAs fabricated by ion beam induced epitaxial crystallization](/preview/png/5465175.png)
چکیده انگلیسی
In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion implantation and subsequent helium ion beam induced epitaxial crystallization. In addition, we use different helium energies to anneal the GaMnAs thin films. The regrown GaMnAs thin films are measured using high-resolution X-Ray diffraction, Raman scattering and spectrophotometry to analyze the crystal structures and optical properties. It is found that the GaMnAs thin films remain fully strained. All experimental results indicate that the GaMnAs thin film is formed after the ion beam induced epitaxial crystallization annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 306, Part A, 25 November 2016, Pages 92-96
Journal: Surface and Coatings Technology - Volume 306, Part A, 25 November 2016, Pages 92-96
نویسندگان
Nai-Hui Chen, Chien-Hsu Chen, Chien-Ping Lee,