Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-x1-xAlxxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an electric field perpendicular to the layers and an in-plane applied magnetic field. For calculations we use a variational procedure (by using a simple hydrogen-like envelope wave-function), in the effective-mass and parabolic-band approximations. Present theoretical results are found in fair agreement with available experimental measurements in double quantum well heterostructures under applied electric and magnetic fields.