کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465348 | 1398871 | 2016 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of laser diode ridges by the dry-etching of Pd and AlGaN/GaN superlattices
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of laser diode ridges by the dry-etching of Pd and AlGaN/GaN superlattices Formation of laser diode ridges by the dry-etching of Pd and AlGaN/GaN superlattices](/preview/png/5465348.png)
چکیده انگلیسی
This study examined the dry etching characteristics of palladium and GaN/AlGaN superlattices using Cl2/CHF3 and Cl2/Ar chemistry formed by an inductively coupled plasma system for the fabrication of ridges of laser diodes. Although the etch rates of n-GaN and AlGaN/GaN superlattices were similar using Cl2/Ar chemistry, the etch rate of the latter was quenched using Cl2/CHF3 chemistry due to the formation of a non-volatile fluoride layer and/or high bond strength oxide. The ridge pattern was eroded when the Pd was etched at higher source powers, resulting in non-uniform etched features. In addition, Cl2/Ar chemistry could not etch the Pd layer. Using a 2-step etching process combining Cl2/CHF3 chemistry for Pd with Cl2/Ar chemistry for the AlGaN/GaN SLs, a ridge for the laser diodes was formed successfully with a vertical sidewall and a good etched surface morphology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 307, Part B, 15 December 2016, Pages 1107-1111
Journal: Surface and Coatings Technology - Volume 307, Part B, 15 December 2016, Pages 1107-1111
نویسندگان
Jae-Kwan Kim, Sung-Nam Lee, Min-Ju Park, Joon-Seop Kwak, Kyoung-Bo Kim, Ji-Myon Lee,