کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465352 | 1398871 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effects of substrate temperature on properties of B and Ga co-doped ZnO thin films grown by RF magnetron sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work, B and Ga co-doped ZnO (BGZO) films were fabricated by RF magnetron sputtering method. The effects of substrate temperature on the electrical, optical, structural and morphological properties of B and Ga co-doped ZnO films were investigated. XRD results revealed that deposited films were textured along c-axis and maintain wurtzite crystalline symmetry. As substrate temperature increased up to 200 °C, the film crystallinity was improved and the crystallite sizes became larger. At the substrate temperature of 200 °C, the films showed lower resistivity, higher Hall mobility and higher optical band gap. It was also observed that all films showed high transparency in the visible range (400-800 nm), which did not change obviously with the substrate temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 307, Part B, 15 December 2016, Pages 1129-1133
Journal: Surface and Coatings Technology - Volume 307, Part B, 15 December 2016, Pages 1129-1133
نویسندگان
Lei Zhang, Jian Huang, Jin Yang, Ke Tang, Bing Ren, Shuwei Zhang, Linjun Wang,