کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5465352 1398871 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effects of substrate temperature on properties of B and Ga co-doped ZnO thin films grown by RF magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The effects of substrate temperature on properties of B and Ga co-doped ZnO thin films grown by RF magnetron sputtering
چکیده انگلیسی
In this work, B and Ga co-doped ZnO (BGZO) films were fabricated by RF magnetron sputtering method. The effects of substrate temperature on the electrical, optical, structural and morphological properties of B and Ga co-doped ZnO films were investigated. XRD results revealed that deposited films were textured along c-axis and maintain wurtzite crystalline symmetry. As substrate temperature increased up to 200 °C, the film crystallinity was improved and the crystallite sizes became larger. At the substrate temperature of 200 °C, the films showed lower resistivity, higher Hall mobility and higher optical band gap. It was also observed that all films showed high transparency in the visible range (400-800 nm), which did not change obviously with the substrate temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 307, Part B, 15 December 2016, Pages 1129-1133
نویسندگان
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