کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546536 1450485 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers
چکیده انگلیسی

A full quantum-mechanical description of the quasi-bound states in parabolic quantum wells and barriers is presented. The GaAs/AlGaAs heterostructures are considered within the framework of the semi-empirical sp3s*sp3s* spin dependent tight-binding model and the surface Green function matching method (SGFM). Series of equidistant energy quasi-bound states are observed in the continuous spectrum and their FWHM and mean life time are calculated. Strong energy and spatial localizations are found in correlation with the large mean life times.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issues 3–4, March–April 2008, Pages 442–446
نویسندگان
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