کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546571 1450485 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films
چکیده انگلیسی

The recombination processes around the excitonic region of undoped ZnSe and chlorine doped ZnSe thin films were studied by continuous-wave photoluminescence (cw-PL) and time-resolved photoluminescence (TRPL) spectroscopies. Samples with different chlorine concentration were obtained by varying the temperature of the Cl source. The evolution of the PL signal and its decay time were analyzed as a function of temperature. Activation energy (Ea) values associated to the quenching of the D0X and band-to-band emission were obtained from the temperature dependent cw-PL experiments. The activation energy was lower for the film with higher Cl content. The characteristic exponential decay time (τPL) of the PL signal decreased with increasing Cl concentration.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issues 3–4, March–April 2008, Pages 582–585
نویسندگان
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