Analog switch device using a MOS structure

The development and performance of an analog switch device is presented. The device is based in a metal–oxide–semiconductor (MOS) structure to control the current flow between two terminals, called drain and source. This current is controlled modulating the space charge region width of the MOS structure. Applying a gate voltage the SCR width is increased to a value larger than the theoretical one, this is due to the leakage current existence through the oxide. This oxide characteristic was obtained depositing the film by Atmospheric Pressure Chemical Vapor Deposition (APCVD) at 125 °C. The theoretical and experimental results are presented.