کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546604 871921 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER
چکیده انگلیسی

In this paper we present analog and digital studies of the single electron transistor (SET), in which only one electron at the time is transferred through the circuit. In the first part of this paper, we show numerical simulations of fundamental characteristics of SET using MATLAB. As a second part of this work we develop a closely example of macro-model of SET using SIMPLORER. Our idea to concept this macro-model was based on the quantification of the output signal on the island level. In order to obtain a quantified output signal on the island we have modeled a quantum dots as a quantizer bloc. This signal quantified was correlated to the energy levels. This description of a model let us to valid our conception and to value the impact of quantizer bloc on the output response of the SET.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issue 12, December 2007, Pages 1156–1160
نویسندگان
, , , , ,