کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546668 1450489 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carriers temperature for an operating silicon p–n junction
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Carriers temperature for an operating silicon p–n junction
چکیده انگلیسی

An analytic expression is introduced to describe the dependence of the carriers temperature with the lattice temperature. An experimental study of the temperature dependence of silicon junction characteristics leads to an experimental determination of the carriers temperature. An average error of 2.5% between the experimental values and the calculated values is obtained. The introduction of the carriers temperature is used to study the temperature dependence of the energy gap and to determine the value of the energy bandgap at 0 K. The carriers temperature is efficient to use in studying optoelectronic properties of silicon devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issues 4–5, April–May 2007, Pages 615–619
نویسندگان
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