کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466805 | 1518302 | 2017 | 31 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of accelerating voltage and specimen thickness on the spatial resolution of transmission electron backscatter diffraction in Cu
ترجمه فارسی عنوان
اثرات ولتاژ شتاب دهنده و ضخامت نمونه بر روی حل مسائل پراش پرتو الکترونی در سیو
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
A quantitative approach was proposed to determine the spatial resolution of transmission electron backscatter diffraction (t-EBSD) and to understand the limits of spatial resolution of t-EBSD. In this approach, Cu bicrystals and digital image correlation were employed. The effects of accelerating voltage and specimen thickness on the spatial resolution of t-EBSD were also investigated. t-EBSD specimens with 8 μm Ã 10 μm dimensions and different thicknesses were prepared using focused ion beam milling. The optimized quality of Kikuchi pattern was achieved at a working distance of 12 mm and a tilting angle of 20°. The optimum depth resolution of 34.4 nm was observed in the lower surface of a 100 nm thick sample at 25 kV. Thus, the penetration depth from the upper surface is 65.6 nm. The optimum lateral and longitudinal resolutions obtained from a 100 nm thick sample at 30 kV are 25.2 and 43.4 nm, respectively. The spatial resolution of t-EBSD can be enhanced by increasing the accelerating voltage and decreasing the sample thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 177, June 2017, Pages 43-52
Journal: Ultramicroscopy - Volume 177, June 2017, Pages 43-52
نویسندگان
Shih Jhih-Wun, Kuo Ka-Wei, Kuo Jui-Chao, Kuo Tsung-Yuan,