کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5466805 1518302 2017 31 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of accelerating voltage and specimen thickness on the spatial resolution of transmission electron backscatter diffraction in Cu
ترجمه فارسی عنوان
اثرات ولتاژ شتاب دهنده و ضخامت نمونه بر روی حل مسائل پراش پرتو الکترونی در سیو
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
A quantitative approach was proposed to determine the spatial resolution of transmission electron backscatter diffraction (t-EBSD) and to understand the limits of spatial resolution of t-EBSD. In this approach, Cu bicrystals and digital image correlation were employed. The effects of accelerating voltage and specimen thickness on the spatial resolution of t-EBSD were also investigated. t-EBSD specimens with 8 μm × 10 μm dimensions and different thicknesses were prepared using focused ion beam milling. The optimized quality of Kikuchi pattern was achieved at a working distance of 12 mm and a tilting angle of 20°. The optimum depth resolution of 34.4 nm was observed in the lower surface of a 100 nm thick sample at 25 kV. Thus, the penetration depth from the upper surface is 65.6 nm. The optimum lateral and longitudinal resolutions obtained from a 100 nm thick sample at 30 kV are 25.2 and 43.4 nm, respectively. The spatial resolution of t-EBSD can be enhanced by increasing the accelerating voltage and decreasing the sample thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 177, June 2017, Pages 43-52
نویسندگان
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