Changes of electrical properties by Al content of AlxGa1−xAs in pHEMT structures as observed using HRXRD

Characterizations on the pseudomorphic High Electron Mobility Transistor structure under High-Resolution X-ray Diffraction (HRXRD) have been carried out at room temperature. Variation of Al contents in AlxGa1−xAs alloys has been found to show a shift of diffraction peaks. This variation is also found to show the change of lattice constant of crystal and also sheet carrier concentration as obtained from a Hall effect measurement. The latter phenomenon is considerably interesting to study in the early stage of the electrical properties of device based on the crystal structure.