کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467204 | 1518618 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Application of SEU imaging for analysis of device architecture using a 25Â MeV/u 86Kr ion microbeam at HIRFL
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The heavy-ion imaging of single event upset (SEU) in a flash-based field programmable gate array (FPGA) device was carried out for the first time at Heavy Ion Research Facility in Lanzhou (HIRFL). The three shift register chains with separated input and output configurations in device under test (DUT) were used to identify the corresponding logical area rapidly once an upset occurred. The logic units in DUT were partly configured in order to distinguish the registers in SEU images. Based on the above settings, the partial architecture of shift register chains in DUT was imaged by employing the microbeam of 86Kr ion with energy of 25Â MeV/u in air. The results showed that the physical distribution of registers in DUT had a high consistency with its logical arrangement by comparing SEU image with logic configuration in scanned area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 404, 1 August 2017, Pages 254-258
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 404, 1 August 2017, Pages 254-258
نویسندگان
Tianqi Liu, Zhenlei Yang, Jinlong Guo, Guanghua Du, Teng Tong, Xiaohui Wang, Hong Su, Wenjing Liu, Jiande Liu, Bin Wang, Bing Ye, Jie Liu,