کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546723 871937 2006 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design of a Hamming neural network based on single-electron tunneling devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Design of a Hamming neural network based on single-electron tunneling devices
چکیده انگلیسی

In this paper, the first complete implementation of a Hamming neural network based on single-electron devices is presented. A large-scale network for character recognition simulation based on building block approach was successfully carried out. Simulations were done using SIMON and MATLAB softwares. Effects such as offset charges and dynamic behavior are taken into account. Moreover, room temperature operation is considered.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 37, Issue 6, June 2006, Pages 510–518
نویسندگان
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