کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467590 | 1398939 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ranges of 10-350Â keV H and H2 ions in (1Â 1Â 1) diamond
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Understanding of the implantation process of the hydrogen ions into diamond is of great technological interest for the fabrication of the color centers required for quantum computing and sensing applications. Here, the hydrogen range and defect-depth distribution in (1Â 1Â 1) HPHT diamond irradiated with 10-350Â keV/proton H+ and H2+ ions in non channeling direction are experimentally measured by means of cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectroscopy (SIMS). Surface morphology was studied by atomic force microscopy. It is found that the proton ranges at energies below 100Â keV are significantly (more than 50%) underestimated in TRIM simulations whereas measured profiles coincide well with simulated ones at ion energies above 100Â keV. The difference at low energies is due to approximations used in TRIM code. First is overestimation of electron energy losses. In addition, binary collision approximation and/or ZBL potential in this energy range are not suitable for proton stopping in diamond.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 634-637
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 634-637
نویسندگان
V.P. Popov, M.A. Ilnitskii, G.P. Pokhil, A.I. Titov, P.A. Karaseov, K.V. Karabeshkin, Yu.N. Pal'yanov, S. Rubanov,