کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5467599 1398939 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modification of graphene by ion beam
ترجمه فارسی عنوان
اصلاح گرافن توسط پرتو یون
کلمات کلیدی
گرافن، ایون، کاستی، رامان،
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
چکیده انگلیسی
Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25 keV to 100 keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 683-688
نویسندگان
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