کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467603 | 1398939 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Diffusion of a mono-energetic implanted species with a Gaussian profile
ترجمه فارسی عنوان
پراکنش یک گونه کاشته شده با انرژی یکنواخت با یک پروفایل گاوسی
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کلمات کلیدی
معادله فی نفوذ، مشخصات گاوسی، مشخصات ایمپلنت، نفوذ، دوپینگ
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
The implanted profile in an isotropic substrate of a mono-energetic ion species is usually very near a Gaussian profile. An exact solution to the time-dependent Fick diffusion equation of an initially Gaussian profile is presented. This solution is a general one also covering the diffusion within the two limiting cases usually considered in solutions to the Fick equation, viz. a perfect sink at the surface and a perfectly reflecting surface plane at the surface. An analysis of the solutions for these two cases shows that at small diffusion times the main effect of annealing is a nearly symmetric broadening of the implanted profile. At the origin and for longer diffusion times the profile deviates significantly from Gaussian. A review is also given of past attempts to extract diffusion coefficients by fitting experimental data to approximate equations based on simplified initial profiles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 708-713
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 708-713
نویسندگان
Johan B. Malherbe, P.A. Selyshchev, O.S. Odutemowo, C.C. Theron, E.G. Njoroge, D.F. Langa, T.T. Hlatshwayo,