کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5467603 1398939 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Diffusion of a mono-energetic implanted species with a Gaussian profile
ترجمه فارسی عنوان
پراکنش یک گونه کاشته شده با انرژی یکنواخت با یک پروفایل گاوسی
کلمات کلیدی
معادله فی نفوذ، مشخصات گاوسی، مشخصات ایمپلنت، نفوذ، دوپینگ
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
چکیده انگلیسی
The implanted profile in an isotropic substrate of a mono-energetic ion species is usually very near a Gaussian profile. An exact solution to the time-dependent Fick diffusion equation of an initially Gaussian profile is presented. This solution is a general one also covering the diffusion within the two limiting cases usually considered in solutions to the Fick equation, viz. a perfect sink at the surface and a perfectly reflecting surface plane at the surface. An analysis of the solutions for these two cases shows that at small diffusion times the main effect of annealing is a nearly symmetric broadening of the implanted profile. At the origin and for longer diffusion times the profile deviates significantly from Gaussian. A review is also given of past attempts to extract diffusion coefficients by fitting experimental data to approximate equations based on simplified initial profiles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 708-713
نویسندگان
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