کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546768 871942 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
چکیده انگلیسی

This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. Different design targets were taken in account such as similar power dissipation, transconductance over drain current ratio and die area. Comparisons with OTAs made with conventional SOI nMOSFETs, are performed showing that the GC OTAs presents larger open-loop voltage gain without degrading the phase margin, unit gain frequency and slew rate simultaneously with a significant required die area reduction depending on LLD/L ratio used. Circuit simulations and experimental results are used to qualify the analysis.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 37, Issue 1, January 2006, Pages 31–37
نویسندگان
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