کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467701 | 1518622 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A simple analytical model of single-event upsets in bulk CMOS
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work presents an alternative approach to estimating SEU cross-section as a function of linear energy transfer (LET) that can be further developed into a method of SEU rate prediction. The goal is to propose a simple, yet physics-based, approach with just two parameters that can be used even in situations when only a process node of the device is known. The developed approach is based on geometrical interpretation of SEU cross-section and an analytical solution to the diffusion problem obtained for a simplified IC topology model. A good fit of the model to the experimental data encompassing 7 generations of SRAMs is demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 400, 1 June 2017, Pages 31-36
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 400, 1 June 2017, Pages 31-36
نویسندگان
Armen V. Sogoyan, Alexander I. Chumakov, Anatoly A. Smolin, Anastasia V. Ulanova, Anna B. Boruzdina,