کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
546783 | 871943 | 2014 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices](/preview/png/546783.png)
• NBTI asymmetry between forward and reverse mode under non-uniform stress.
• The phenomena attribute to local self-heating enhanced NBTI by ballistic phonon.
• We propose a semi-empirical analytical model fitting well with experimental data.
The degradation of negative bias temperature instability (NBTI) on 28 nm High-K Metal Gate (HKMG) p-MOSFET devices under non-uniform stress condition has been systematically studied. We found the asymmetry between forward and reverse Idsat shift under non-uniform stress condition is significant for long channel devices even under low drain bias stress (e.g., Vds = −0.1 V and gate channel length L = 1 μm), and seems to be dominated by a minimally required critical length (L = 0.2 μm derived from the experimental data). To the authors’ best knowledge, these are new phenomena reported. We attribute these anomalous NBTI characteristics with drain bias to the local self-heating (LSH) activated NBTI degradation mechanism. One semi-empirical analytical model, which fits well with our experimental data, is then proposed in this paper.
Journal: Microelectronics Reliability - Volume 54, Issue 11, November 2014, Pages 2378–2382