Bipolar resistive switching behavior in Cu/AlN/Pt structure for ReRAM application

Highly stable bipolar resistive switching behavior of Aluminum nitride (AlN) thin film sandwiched between Cu (Top) and Pt (bottom) electrode has been investigated. Resistive switching properties in Cu/AlN/Pt structure are induced by the formation/disruption of Cu conducting filaments in AlN thin film. Excellent non-volatile resistive switching characteristics have been observed at voltage of +2.6 V and −1.7 V. Trap controlled space charge limited current (SCLC) and ohmic behaviors are the dominant conduction mechanisms at high resistance state (HRS) and low resistance state (LRS) respectively. The resistance ratio corresponding to different HRS and LRS is found in the order of ∼104. Moreover, the device also showed an endurance till >104 cycles and a non volatile retention time for >104 s.