کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5468351 | 1518932 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature](/preview/png/5468351.png)
چکیده انگلیسی
The inclusion of cubic phase in MOVPE-grown hexagonal GaN on GaAs substrate and its dependence with the growth temperature are investigated by high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and cathodoluminescence (CL). It is observed that the GaN layers surface exhibits 3D-grains structure. The density and shape of these grains are largely dependent on the growth temperature. HR-XRD study reveals the presence of cubic GaN clusters in the hexagonal GaN layer. Using CL we show that the cubic inclusions are not localized at the substrate/epilayer interface but propagate throughout the film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 138, April 2017, Pages 8-14
Journal: Vacuum - Volume 138, April 2017, Pages 8-14
نویسندگان
J. Laifi, N. Chaaben, Y. El Gmili, J.P. Salvestrini, A. Bchetnia, B. El Jani,