Thermal stability of sectorial split-drain magnetic field-effect transistors

• Channel boundary charge trapping effect of sectorial SD-MAGFET is investigated.
• Such effect causes magnetic sensitivity hysteresis and deterioration.
• Such effect is geometric, magnetic field and temperature dependent.
• Proper device geometry can alleviate magnetic sensitivity variation.

The effect of charge trapping on the performance of sectorial Split-Drain Magnetic Field Effect Transistor (SD-MAGFET) under the influence of magnetic field is examined based on conventional capacitance measurement techniques upon different magnetic field strength and thermal conditions. The experimental results confirmed the charge trapping effect in sectorial SD-MAGFET is magnetic field and temperature dependent, where the charge trapping sites are localized at the channel boundary, which verifies the conjecture of trap-assisted magnetic sensitivity hysteresis and deterioration of the device found in recent literatures. The results of the study are useful to sectorial SD-MAGFET in high performance magnetic sensing applications.