کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547159 871982 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A single-channel 8-bit 660 MS/s asynchronous SAR ADC with pre-settling procedure in 65 nm CMOS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A single-channel 8-bit 660 MS/s asynchronous SAR ADC with pre-settling procedure in 65 nm CMOS
چکیده انگلیسی

A single-channel 8-bit low-power high-speed SAR ADC with a novel pre-settling procedure is presented in this paper. The proposed procedure relaxes the settling time significantly and improves the speed of the ADC. Moreover, the asynchronous technique avoids the high frequency internal clocks and further increases the speed of the SAR ADC. Based on SMIC 65 nm 1.2-V CMOS technology, the simulation results demonstrate that DNL and INL are −0.4/0.4 LSBs and −0.9/0.8 LSBs, respectively. At 660 MS/s sampling rate, the ADC consumes 7.6 mW from a 1.2 V supply. The proposed SAR ADC׳s SNDR and SFDR are 49.5 dB and 64.2 dB, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 45, Issue 7, July 2014, Pages 880–885
نویسندگان
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