Measuring resistivity of silicon nanowire using pseudo-random binary sequence injection

Nanostructures can show mechanical and electrical properties that differ from their bulk forms, and thus, precise experimental evaluation is needed when the structures are used in nanoelectronic devices or nanoelectromechanical systems. Ohm׳s law does not apply for nanostructures due to the various effects of size. It has been shown that due to surface scattering, the resistivity of the wire increases when the size decreases. This paper extends the studies and investigates how the resistive characteristics vary as the wire is stretched. An electrostatic actuating tensile device is applied and the resistive characteristics are evaluated in the frequency domain by means of maximum-length pseudo-random binary sequence (MLBS). The results reveal unreported characteristics of the applied nanowire; the resistance is increased as a function of stretching force.