کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
547488 872009 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model
چکیده انگلیسی

The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based and thus physically continuous at all levels of inversion from linear operation to saturation. Hence, it lends itself conveniently for the use of a design methodology suited for low-power analog circuit design based on the inversion coefficient (ICIC) that has been extensively used in conjugation with the EKV model and allows to make simple calculations of, for example, transconductance efficiency, gain bandwidth product, etc. This methodology helps to make a near-optimal selection of transistor dimensions and operating points even in moderate and weak inversion regions. This paper will discuss the ICIC based design methodology and its application to the next generation BSIM6 compact MOSFET model.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 44, Issue 7, July 2013, Pages 570–575
نویسندگان
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